| PART |
Description |
Maker |
| ZL40812DCE ZL40812DCF ZL40812 |
10GHz Fixed Modulus ÷ 16
10GHz Fixed Modulus ± 16
10GHz Fixed Modulus divide 16 Prescaler
|
ZARLINK[Zarlink Semiconductor Inc]
|
| NLB-310-T3T NBB-X-K1 NLB-310 NLB-310-E NLB-310-T1 |
Cascadable Broadband GaAs MMIC Amplifier DC to 10 GHz
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz
From old datasheet system
0 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
http://
RFMD[RF Micro Devices]
RF Micro Devices, Inc.
RF MICRO DEVICES INC
|
| MAX11014BGTM MAX11015BGTM MAX1101408 |
Automatic RF MESFET Amplifier Drain-Current Controllers
|
Maxim Integrated Products
|
| HMC637 |
GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz
|
Hittite Microwave Corporation
|
| MAX11014 |
(MAX11014 / MAX11015) Automatic RF MESFET Amplifier Drain-Current Controllers
|
Maxim Integrated Products
|
| 25442000 25421600 |
Automatic RF MESFET Amplifier Drain-Current Controllers
8-Bit CODECs CONDUIT实现适配0毫米定额
|
Weidmuller, Corp.
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| NE985100 NE985200 NE985400 |
100 mA, 2 W, K-band power GaAs MESFET
200 mA, 2 W, K-band power GaAs MESFET
400 mA, 2 W, K-band power GaAs MESFET
|
NEC
|
| ZL40812 |
10GHz Fixed Modulus ÷ 16
From old datasheet system
|
Zarlink
|
| NB7V32M NB7V32MMNG NB7V32MMNTXG |
1.8V / 2.5V, 10GHz ÷2 Clock Divider with CML Outputs
|
ON Semiconductor
|
| MCH4017 |
RF Transistor, 12V, 100mA, fT=10GHz, NPN Single MCPH4
|
ON Semiconductor
|
